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Alumina Substrate

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Ceramic substrate is a commonly used electronic packaging substrate material. Compared with plastic and metal substrates, ceramic substrate has the following advantages:

1) Good Insulation
Generally speaking, the higher substrate resistance, the better reliability of the package. Ceramic materials are generally covalent bond compounds with better insulation properties.

2) Low Dielectric Coefficient and Good Frequency Performance
The low dielectric constant and dielectric loss of ceramic materials can reduce the signal delay time and increase the transmission speed.

3) Small Coefficient of Thermal Expansion (CTE)
Covalent bond compounds generally have high melting point, and the higher the melting point, the smaller the thermal expansion coefficient, so the CTE of ceramic materials is generally small.

4) High Thermal Conductivity
Ceramic substrate materials are widely used in high-reliability, high-frequency, high-temperature resistance, and strong air-tight product packaging in aviation, aerospace and military engineering. The packaging of ceramic substrate materials is generally a multilayer ceramic substrate package, which is widely used in hybrid integrated circuit (HIC) and multi-chip module (MCM) ceramic packages.


For material properties, please refer to the table below.



Alumina Ceramic Substrate
ItemUnit96% Al2O399.6% Al2O3
Mechanical Properties
Color//WhiteIvory
DensityDrainage Methodg/cm3≥3.70≥3.95
Light Reflectivity400nm/1mm%9483
Flexural StrengthThree Point BendingMPa>350>500
Fracture ToughnessIndentation MethodMPa·m1/233
Vickers HardnessLoad 4.9NGPa1416
Young's ModulusStretching MethodGPa340300
Water Absorption
%00
Camber/Length‰T≤0.3: ≤5‰, Others: ≤3‰≤3‰
Thermal Properties
Max. Service Temperature (Non-loading)/ºC12001400
CTE (Coefficient of20-800ºC1×10-6/ºC7.87.9
Thermal Expansion)
Thermal Conductivity25ºCW/m·K>24>29
Thermal Shock Resistance800ºC≥10 TimesNo CrackNo Crack
Specific Heat25ºCJ/kg·k750780
Electrical Properties
Dielectric Constant25ºC, 1MHz/9.49.8
Dielectric Loss Angle25ºC, 1MHz×10-4≤3≤2
Volume Resistivity25ºCΩ·cm≥1014≥1014
Dielectric StrengthDCKV/mm≥15≥15


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